Datasheets
APT10M07JVR by:

Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET

Part Details for APT10M07JVR by Microsemi Corporation

Overview of APT10M07JVR by Microsemi Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for APT10M07JVR

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APT10M07JVR Part Data Attributes

APT10M07JVR Microsemi Corporation
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APT10M07JVR Microsemi Corporation Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Part Package Code ISOTOP
Pin Count 4
Manufacturer Package Code ISOTOP
Reach Compliance Code compliant
ECCN Code EAR99
Drain Current-Max (ID) 225 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 700 W

Alternate Parts for APT10M07JVR

This table gives cross-reference parts and alternative options found for APT10M07JVR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT10M07JVR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT10M07JVFR Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT10M07JVR vs APT10M07JVFR
APT10M07JVR Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology APT10M07JVR vs APT10M07JVR
APT10M07JVFR Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Microsemi Corporation APT10M07JVR vs APT10M07JVFR
Part Number Description Manufacturer Compare
IXTN210P10T Power Field-Effect Transistor, Littelfuse Inc APT10M07JVR vs IXTN210P10T
IXFN150N10 Power Field-Effect Transistor, 150A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 Littelfuse Inc APT10M07JVR vs IXFN150N10
IXFN150N10 Power Field-Effect Transistor, 150A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation APT10M07JVR vs IXFN150N10
APT10M07JVR Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology APT10M07JVR vs APT10M07JVR
APT10M07JVFR Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT10M07JVR vs APT10M07JVFR
IXFN200N10P Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 IXYS Corporation APT10M07JVR vs IXFN200N10P
STE250NS10 220A, 100V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, ISOTOP-4 STMicroelectronics APT10M07JVR vs STE250NS10
MTE215N10E 215A, 100V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC APT10M07JVR vs MTE215N10E
STE180N10 180A, 100V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 STMicroelectronics APT10M07JVR vs STE180N10
IXFN280N085 Power Field-Effect Transistor, 280A I(D), 85V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation APT10M07JVR vs IXFN280N085

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