MUN5111DW1T1G vs RN2962 feature comparison

MUN5111DW1T1G onsemi

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RN2962 Toshiba America Electronic Components

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Pbfree Code Yes No
Part Life Cycle Code Active End Of Life
Ihs Manufacturer ONSEMI TOSHIBA CORP
Part Package Code SC-88/SC70-6/SOT-363 6 LEAD
Package Description CASE 419B-02, SC-88, 6 PIN ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN
Pin Count 6 6
Manufacturer Package Code 419B-02
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 35 50
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 6 6
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.15 W 0.2 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Collector-Base Capacitance-Max 6 pF
Transition Frequency-Nom (fT) 200 MHz
VCEsat-Max 0.3 V

Compare MUN5111DW1T1G with alternatives

Compare RN2962 with alternatives