MUR860G vs UMUR860L-TN3-R feature comparison

MUR860G Galaxy Microelectronics

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UMUR860L-TN3-R Unisonic Technologies Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD UNISONIC TECHNOLOGIES CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application SUPER FAST RECOVERY POWER
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.5 V 1.5 V
JEDEC-95 Code TO-220AC TO-252
JESD-30 Code R-PSFM-T2 R-PSSO-G2
Non-rep Pk Forward Current-Max 100 A 100 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 8 A 8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Current-Max 10 µA 5 µA
Reverse Recovery Time-Max 0.05 µs 0.06 µs
Reverse Test Voltage 600 V 600 V
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Additional Feature LOW LEAKAGE CURRENT

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