NDC7002N
vs
NDC7002NX
feature comparison
| Part Life Cycle Code |
|
Obsolete
|
| Ihs Manufacturer |
|
NATIONAL SEMICONDUCTOR CORP
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G6
|
| Reach Compliance Code |
|
unknown
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.29.00.95
|
| Configuration |
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
50 V
|
| Drain Current-Max (ID) |
|
0.51 A
|
| Drain-source On Resistance-Max |
|
2 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
|
R-PDSO-G6
|
| Number of Elements |
|
2
|
| Number of Terminals |
|
6
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
|
1.4 W
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| Base Number Matches |
|
1
|
|
|
|
Compare NDC7002NX with alternatives