NE32584C-T1
vs
NE32584C-T1
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
CALIFORNIA EASTERN LABORATORIES
|
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
|
| Package Description |
DISK BUTTON, O-CRDB-F4
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW NOISE
|
LOW NOISE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
4 V
|
3 V
|
| Drain Current-Max (ID) |
0.09 A
|
0.02 A
|
| FET Technology |
HETERO-JUNCTION
|
HETERO-JUNCTION
|
| Highest Frequency Band |
X BAND
|
KU BAND
|
| JESD-30 Code |
O-CRDB-F4
|
X-CXMW-F4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
ROUND
|
UNSPECIFIED
|
| Package Style |
DISK BUTTON
|
MICROWAVE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Gain-Min (Gp) |
11 dB
|
11 dB
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
RADIAL
|
UNSPECIFIED
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare NE32584C-T1 with alternatives
Compare NE32584C-T1 with alternatives