NE33284A-T1
vs
NE3210S01-T1B
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
NEC ELECTRONICS AMERICA INC
|
NEC ELECTRONICS CORP
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW NOISE
|
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
4 V
|
3 V
|
FET Technology |
HETERO-JUNCTION
|
HETERO-JUNCTION
|
Highest Frequency Band |
X BAND
|
KU BAND
|
JESD-30 Code |
O-CRDB-F4
|
O-XRDB-G4
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
DISK BUTTON
|
DISK BUTTON
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Gain-Min (Gp) |
9.5 dB
|
12 dB
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
FLAT
|
GULL WING
|
Terminal Position |
RADIAL
|
RADIAL
|
Transistor Element Material |
GALLIUM ARSENIDE
|
SILICON
|
Base Number Matches |
1
|
1
|
Package Description |
|
DISK BUTTON, O-XRDB-G4
|
Case Connection |
|
SOURCE
|
Drain Current-Max (ID) |
|
0.015 A
|
Peak Reflow Temperature (Cel) |
|
230
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare NE33284A-T1 with alternatives
Compare NE3210S01-T1B with alternatives