NE425S01-T1
vs
MGF4919G
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
NEC ELECTRONICS CORP
|
MITSUBISHI ELECTRIC CORP
|
| Package Description |
DISK BUTTON, O-CRDB-G4
|
MICROWAVE, X-XXMW-F4
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW NOISE
|
LOW NOISE
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
3 V
|
|
| Drain Current-Max (ID) |
0.02 A
|
0.06 A
|
| FET Technology |
HETERO-JUNCTION
|
HIGH ELECTRON MOBILITY
|
| Highest Frequency Band |
KU BAND
|
KU BAND
|
| JESD-30 Code |
O-CRDB-G4
|
X-XXMW-F4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
UNSPECIFIED
|
| Package Style |
DISK BUTTON
|
MICROWAVE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Gain-Min (Gp) |
10.5 dB
|
12 dB
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
FLAT
|
| Terminal Position |
RADIAL
|
UNSPECIFIED
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
GALLIUM ARSENIDE
|
| Base Number Matches |
2
|
1
|
| Pin Count |
|
4
|
| HTS Code |
|
8541.21.00.95
|
| Operating Temperature-Max |
|
125 °C
|
| Power Dissipation Ambient-Max |
|
0.05 W
|
|
|
|
Compare NE425S01-T1 with alternatives
Compare MGF4919G with alternatives