NE651R479A-T1
vs
NE651R479A-T1
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NEC ELECTRONICS CORP
|
CALIFORNIA EASTERN LABORATORIES
|
| Package Description |
MICROWAVE, R-XQMW-F4
|
MICROWAVE, R-PQMW-F4
|
| Pin Count |
4
|
4
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
5.5 V
|
5.5 V
|
| Drain Current-Max (ID) |
1 A
|
1 A
|
| FET Technology |
HETERO-JUNCTION
|
HETERO-JUNCTION
|
| Highest Frequency Band |
L BAND
|
S BAND
|
| JESD-30 Code |
R-XQMW-F4
|
R-PQMW-F4
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROWAVE
|
MICROWAVE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
QUAD
|
QUAD
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
| Base Number Matches |
1
|
1
|
|
|
|