NJVMJD122T4G-VF01 vs NJVMJD122T4G feature comparison

NJVMJD122T4G-VF01 onsemi

Buy Now Datasheet

NJVMJD122T4G onsemi

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ONSEMI ONSEMI
Package Description DPAK-3/2 DPAK-3/2
Manufacturer Package Code 369C 369C
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Date Of Intro 2017-01-31
Samacsys Manufacturer onsemi onsemi
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 8 A 8 A
Collector-Emitter Voltage-Max 100 V 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 100 100
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN
Reference Standard AEC-Q101 AEC-Q101
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code DPAK (SINGLE GAUGE) TO-252
Pin Count 3
Factory Lead Time 12 Weeks
Power Dissipation-Max (Abs) 20 W
Transition Frequency-Nom (fT) 4 MHz

Compare NJVMJD122T4G-VF01 with alternatives

Compare NJVMJD122T4G with alternatives