NJVMJD32CT4G-VF01 vs NJVMJD32CT4G feature comparison

NJVMJD32CT4G-VF01 onsemi

Buy Now Datasheet

NJVMJD32CT4G onsemi

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ONSEMI ONSEMI
Package Description DPAK-3/2 DPAK-3/2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Date Of Intro 2017-02-10
Samacsys Manufacturer onsemi onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 3 A 3 A
Collector-Emitter Voltage-Max 100 V 100 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 10 10
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type PNP PNP
Reference Standard AEC-Q101 AEC-Q101
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 3 MHz 3 MHz
Base Number Matches 1 1
Part Package Code DPAK (SINGLE GAUGE) TO-252
Pin Count 3
Manufacturer Package Code 369C
Factory Lead Time 10 Weeks
Power Dissipation-Max (Abs) 15 W

Compare NJVMJD32CT4G-VF01 with alternatives

Compare NJVMJD32CT4G with alternatives