NJVMJD45H11T4G-VF01
vs
MJD45H11
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
ONSEMI
|
MOTOROLA INC
|
| Package Description |
DPAK-3/2
|
SMALL OUTLINE, R-PDSO-G2
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
65 Weeks
|
|
| Date Of Intro |
2017-02-07
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
8 A
|
8 A
|
| Collector-Emitter Voltage-Max |
80 V
|
80 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
40
|
40
|
| JESD-30 Code |
R-PSSO-G2
|
R-PDSO-G2
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
90 MHz
|
40 MHz
|
| Base Number Matches |
1
|
12
|
| HTS Code |
|
8541.29.00.75
|
| Power Dissipation Ambient-Max |
|
20 W
|
| Power Dissipation-Max (Abs) |
|
20 W
|
| Qualification Status |
|
Not Qualified
|
| Turn-off Time-Max (toff) |
|
640 ns
|
| VCEsat-Max |
|
1 V
|
|
|
|
Compare NJVMJD45H11T4G-VF01 with alternatives
Compare MJD45H11 with alternatives