NTB25P06T4 vs NTB30N06LT4G feature comparison

NTB25P06T4 Rochester Electronics LLC

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NTB30N06LT4G onsemi

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Pbfree Code No Yes
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ON SEMICONDUCTOR
Package Description CASE 418B-04, D2PAK-3 LEAD FREE, CASE 418B-04, D2PAK-3
Pin Count 3 3
Manufacturer Package Code CASE 418B-04 418B-04
Reach Compliance Code unknown not_compliant
Avalanche Energy Rating (Eas) 600 mJ 101 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 27.5 A 30 A
Drain-source On Resistance-Max 0.082 Ω 0.046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e3
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 80 A 90 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code D2PAK 2 LEAD
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer onsemi
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 88.2 W

Compare NTB25P06T4 with alternatives

Compare NTB30N06LT4G with alternatives