NTB30N06 vs NTB30N06LT4G feature comparison

NTB30N06 onsemi

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NTB30N06LT4G onsemi

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ON SEMICONDUCTOR ON SEMICONDUCTOR
Package Description CASE 418B-04, D2PAK-3 LEAD FREE, CASE 418B-04, D2PAK-3
Pin Count 3 3
Manufacturer Package Code CASE 418B-04 418B-04
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Avalanche Energy Rating (Eas) 101 mJ 101 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 27 A 30 A
Drain-source On Resistance-Max 0.042 Ω 0.046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 235 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 88.2 W 88.2 W
Pulsed Drain Current-Max (IDM) 80 A 90 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pbfree Code Yes
Part Package Code D2PAK 2 LEAD
Samacsys Manufacturer onsemi
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare NTB30N06 with alternatives

Compare NTB30N06LT4G with alternatives