NTD110N02RT4G vs NTD80N02-1G feature comparison

NTD110N02RT4G onsemi

Buy Now Datasheet

NTD80N02-1G Rochester Electronics LLC

Buy Now Datasheet
Pbfree Code Yes No
Part Life Cycle Code End Of Life Active
Ihs Manufacturer ONSEMI ROCHESTER ELECTRONICS LLC
Part Package Code DPAK 4 LEAD Single Gauge Surface Mount
Package Description DPAK-3 LEAD FREE, CASE 369D-01, DPAK-3
Pin Count 4 3
Manufacturer Package Code 369AA CASE 369D-01
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 120 mJ 733 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 24 V 24 V
Drain Current-Max (ID) 12.5 A 80 A
Drain-source On Resistance-Max 0.0062 Ω 0.0058 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 92.5 W
Pulsed Drain Current-Max (IDM) 110 A 200 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) - annealed MATTE TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes

Compare NTD110N02RT4G with alternatives

Compare NTD80N02-1G with alternatives