NTD20N06LT4 vs PHB20N06T,118 feature comparison

NTD20N06LT4 Rochester Electronics LLC

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PHB20N06T,118 NXP Semiconductors

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC NXP SEMICONDUCTORS
Package Description CASE 369C-01, DPAK-3 PLASTIC, D2PAK-3
Pin Count 3 3
Manufacturer Package Code CASE 369C-01 SOT404
Reach Compliance Code unknown not_compliant
Avalanche Energy Rating (Eas) 128 mJ 30.3 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 20 A 20.3 A
Drain-source On Resistance-Max 0.048 Ω 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A 81 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Part Package Code D2PAK
ECCN Code EAR99
HTS Code 8541.29.00.75
Factory Lead Time 4 Weeks
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 62 W

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