NTE229 vs BFR541 feature comparison

NTE229 NTE Electronics Inc

Buy Now Datasheet

BFR541 NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer NTE ELECTRONICS INC NXP SEMICONDUCTORS
Part Package Code TO-92
Package Description CYLINDRICAL, O-PBCY-W3 DISK BUTTON, O-CRDB-F4
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer NTE ELECTRONICS
Collector Current-Max (IC) 0.05 A 0.12 A
Collector-Base Capacitance-Max 0.4 pF
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 60
Highest Frequency Band VERY HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-W3 O-CRDB-F4
Number of Elements 1 1
Number of Terminals 3 4
Package Body Material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND ROUND
Package Style CYLINDRICAL DISK BUTTON
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.425 W
Power Gain-Min (Gp) 28 dB
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Form WIRE FLAT
Terminal Position BOTTOM RADIAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 500 MHz 9000 MHz
Base Number Matches 1 1
HTS Code 8541.21.00.75
Additional Feature LOW NOISE, HIGH RELIABILITY
Operating Temperature-Max 175 °C
Power Dissipation Ambient-Max 0.65 W

Compare NTE229 with alternatives

Compare BFR541 with alternatives