NTE311
vs
2N3866
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NTE ELECTRONICS INC
|
DIGITRON SEMICONDUCTORS
|
| Part Package Code |
TO-39
|
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
8541.29.00.75
|
| Samacsys Manufacturer |
NTE ELECTRONICS
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.4 A
|
0.4 A
|
| Collector-Base Capacitance-Max |
3 pF
|
3 pF
|
| Collector-Emitter Voltage-Max |
30 V
|
30 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
25
|
5
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JEDEC-95 Code |
TO-39
|
TO-39
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
5 W
|
5 W
|
| Power Dissipation-Max (Abs) |
5 W
|
5 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
800 MHz
|
800 MHz
|
| Base Number Matches |
1
|
35
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
200 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Power Gain-Min (Gp) |
|
10 dB
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| VCEsat-Max |
|
1 V
|
|
|
|
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