NTE312
vs
2SK315E
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NTE ELECTRONICS INC
|
SANYO ELECTRIC CO LTD
|
| Package Description |
CYLINDRICAL, O-PBCY-W3
|
IN-LINE, R-PSIP-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
NTE ELECTRONICS
|
|
| Configuration |
SINGLE
|
SINGLE
|
| FET Technology |
JUNCTION
|
JUNCTION
|
| Feedback Cap-Max (Crss) |
1 pF
|
0.3 pF
|
| Highest Frequency Band |
VERY HIGH FREQUENCY BAND
|
VERY HIGH FREQUENCY BAND
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-W3
|
R-PSIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.36 W
|
0.2 W
|
| Power Gain-Min (Gp) |
10 dB
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
5
|
1
|
| Pin Count |
|
3
|
| Drain Current-Max (ID) |
|
0.02 A
|
| Operating Temperature-Max |
|
125 °C
|
|
|
|
Compare NTE312 with alternatives
Compare 2SK315E with alternatives