NTE350F
vs
SD1214-12
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NTE ELECTRONICS INC
|
MICROSEMI CORP
|
| Package Description |
FLANGE MOUNT, O-CRFM-F4
|
POST/STUD MOUNT, O-XRPM-F4
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Collector Current-Max (IC) |
2.5 A
|
2 A
|
| Collector-Emitter Voltage-Max |
18 V
|
18 V
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
5
|
|
| Highest Frequency Band |
VERY HIGH FREQUENCY BAND
|
VERY HIGH FREQUENCY BAND
|
| JESD-30 Code |
O-CRFM-F4
|
O-XRPM-F4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
POST/STUD MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
31 W
|
|
| Power Dissipation-Max (Abs) |
31 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
RADIAL
|
RADIAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Pin Count |
|
4
|
| Additional Feature |
|
HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS
|
| Collector-Base Capacitance-Max |
|
70 pF
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
200 °C
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare NTE350F with alternatives
Compare SD1214-12 with alternatives