NTP13N10 vs BUK456-100B feature comparison

NTP13N10 Rochester Electronics LLC

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BUK456-100B Philips Semiconductors

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Pbfree Code Yes
Rohs Code No No
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC PHILIPS SEMICONDUCTORS
Part Package Code TO-220AB
Package Description CASE 221A-09, 3 PIN ,
Pin Count 3
Manufacturer Package Code CASE 221A-09
Reach Compliance Code unknown unknown
Avalanche Energy Rating (Eas) 85 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 13 A 32 A
Drain-source On Resistance-Max 0.165 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 39 A
Qualification Status COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 2 3
ECCN Code EAR99
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 150 W

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