NTR1P02LT1
vs
NVTR01P02LT1G
feature comparison
| Pbfree Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Not Recommended
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
ONSEMI
|
| Part Package Code |
SOT-23 (TO-236) 3 LEAD
|
SOT-23 (TO-236) 3 LEAD
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
|
| Pin Count |
3
|
3
|
| Manufacturer Package Code |
318
|
318-08
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
onsemi
|
onsemi
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
1.3 A
|
1.3 A
|
| Drain-source On Resistance-Max |
0.22 Ω
|
0.22 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-236
|
TO-236
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
235
|
NOT SPECIFIED
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.4 W
|
0.4 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Factory Lead Time |
|
74 Weeks
|
| Operating Temperature-Min |
|
-55 °C
|
| Reference Standard |
|
AEC-Q101
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare NTR1P02LT1 with alternatives
Compare NVTR01P02LT1G with alternatives