NTTFS5116PLTAG
vs
NVTFS5116PLTWG
feature comparison
Pbfree Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ONSEMI
|
ONSEMI
|
Part Package Code |
WDFN8 3.3x3.3, 0.65P
|
WDFN8 3.3x3.3, 0.65P
|
Package Description |
WDFN8, 8 PIN
|
WDFN-8
|
Pin Count |
8
|
8
|
Manufacturer Package Code |
511AB
|
511AB
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
2 Days
|
18 Weeks
|
Samacsys Manufacturer |
onsemi
|
onsemi
|
Avalanche Energy Rating (Eas) |
45 mJ
|
45 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
5.7 A
|
6 A
|
Drain-source On Resistance-Max |
0.052 Ω
|
0.072 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
84 pF
|
|
JESD-30 Code |
S-PDSO-F8
|
S-PDSO-F5
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
8
|
5
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
40 W
|
3.2 W
|
Pulsed Drain Current-Max (IDM) |
76 A
|
126 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
Matte Tin (Sn) - annealed
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
|
|
|
Compare NTTFS5116PLTAG with alternatives
Compare NVTFS5116PLTWG with alternatives