NX7002AK vs VP3203N3-GP013 feature comparison

NX7002AK NXP Semiconductors

Buy Now Datasheet

VP3203N3-GP013 Supertex Inc

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS SUPERTEX INC
Package Description PLASTIC PACKAGE-3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer NXP
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 30 V
Drain Current-Max (ID) 0.19 A 0.65 A
Drain-source On Resistance-Max 5.2 Ω 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB TO-92
JESD-30 Code R-PDSO-G3 O-PBCY-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL P-CHANNEL
Reference Standard IEC-60134
Surface Mount YES NO
Terminal Finish Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
HTS Code 8541.21.00.95
Additional Feature HIGH INPUT IMPEDANCE
Feedback Cap-Max (Crss) 60 pF
Power Dissipation Ambient-Max 0.74 W
Power Dissipation-Max (Abs) 0.74 W

Compare VP3203N3-GP013 with alternatives