P2114L
vs
CMM5114D3Z
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
INTERSIL CORP
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
3A001.A.2.C
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Base Number Matches |
5
|
2
|
Package Description |
|
DIP, DIP18,.3
|
I/O Type |
|
COMMON
|
JESD-30 Code |
|
R-XDIP-T18
|
JESD-609 Code |
|
e0
|
Memory Density |
|
4096 bit
|
Memory Width |
|
4
|
Number of Terminals |
|
18
|
Number of Words |
|
1024 words
|
Number of Words Code |
|
1000
|
Operating Mode |
|
ASYNCHRONOUS
|
Operating Temperature-Max |
|
125 °C
|
Operating Temperature-Min |
|
-55 °C
|
Organization |
|
1KX4
|
Output Characteristics |
|
3-STATE
|
Package Body Material |
|
CERAMIC
|
Package Code |
|
DIP
|
Package Equivalence Code |
|
DIP18,.3
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
IN-LINE
|
Parallel/Serial |
|
PARALLEL
|
Qualification Status |
|
Not Qualified
|
Screening Level |
|
MIL-STD-883 Class B (Modified)
|
Supply Current-Max |
|
0.006 mA
|
Supply Voltage-Nom (Vsup) |
|
5 V
|
Surface Mount |
|
NO
|
Technology |
|
CMOS
|
Temperature Grade |
|
MILITARY
|
Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
|
THROUGH-HOLE
|
Terminal Pitch |
|
2.54 mm
|
Terminal Position |
|
DUAL
|
Total Dose |
|
100k Rad(Si) V
|
|
|
|
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