PDTA115EEF
vs
PDTA115ES
feature comparison
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
NEXPERIA
|
NXP SEMICONDUCTORS
|
Package Description |
SMALL OUTLINE, R-PDSO-F3
|
PLASTIC, SC-43A, 3 PIN
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Date Of Intro |
2017-02-01
|
|
Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 1
|
BUILT-IN BIAS RESISTOR RATIO IS 1
|
Collector Current-Max (IC) |
0.02 A
|
0.02 A
|
Collector-Emitter Voltage-Max |
50 V
|
50 V
|
Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
DC Current Gain-Min (hFE) |
80
|
80
|
JESD-30 Code |
R-PDSO-F3
|
O-PBCY-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
Polarity/Channel Type |
PNP
|
PNP
|
Surface Mount |
YES
|
NO
|
Terminal Form |
FLAT
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
3
|
Rohs Code |
|
Yes
|
Part Package Code |
|
TO-92
|
Pin Count |
|
3
|
JEDEC-95 Code |
|
TO-92
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Power Dissipation-Max (Abs) |
|
0.5 W
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
Compare PDTA115EEF with alternatives
Compare PDTA115ES with alternatives