PDTA115EM vs PDTA115EEF feature comparison

PDTA115EM Nexperia

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PDTA115EEF NXP Semiconductors

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Rohs Code Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Package Description CHIP CARRIER, R-PBCC-N3 SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Case Connection COLLECTOR
Collector Current-Max (IC) 0.02 A 0.02 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PBCC-N3 R-PDSO-F3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP PNP
Surface Mount YES YES
Terminal Finish TIN
Terminal Form NO LEAD FLAT
Terminal Position BOTTOM DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 2
Part Package Code SC-89
Pin Count 3
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified

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