PDTA115EM
vs
PDTA115TS
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NEXPERIA
|
NXP SEMICONDUCTORS
|
| Package Description |
CHIP CARRIER, R-PBCC-N3
|
CYLINDRICAL, O-PBCY-T3
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2017-02-01
|
|
| Samacsys Manufacturer |
Nexperia
|
|
| Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 1
|
BUILT IN BIAS RESISTOR
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.02 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
80
|
100
|
| JESD-30 Code |
R-PBCC-N3
|
O-PBCY-T3
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
CHIP CARRIER
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
TIN
|
Tin (Sn)
|
| Terminal Form |
NO LEAD
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
1
|
| Part Package Code |
|
TO-92
|
| Pin Count |
|
3
|
| JEDEC-95 Code |
|
TO-92
|
| Power Dissipation-Max (Abs) |
|
0.5 W
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare PDTA115EM with alternatives
Compare PDTA115TS with alternatives