PDZ3.9B
vs
BZV55-B3V9,115
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
PHILIPS SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Power Dissipation-Max |
0.25 W
|
0.4 W
|
| Reference Voltage-Nom |
3.9 V
|
3.9 V
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN
|
| Working Test Current |
5 mA
|
5 mA
|
| Base Number Matches |
3
|
2
|
| Part Package Code |
|
MELF
|
| Package Description |
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Pin Count |
|
2
|
| Manufacturer Package Code |
|
SOD80C
|
| Factory Lead Time |
|
4 Weeks
|
| Case Connection |
|
ISOLATED
|
| Diode Element Material |
|
SILICON
|
| Dynamic Impedance-Max |
|
90 Ω
|
| JESD-30 Code |
|
O-LELF-R2
|
| Moisture Sensitivity Level |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Polarity |
|
UNIDIRECTIONAL
|
| Qualification Status |
|
Not Qualified
|
| Technology |
|
ZENER
|
| Terminal Form |
|
WRAP AROUND
|
| Terminal Position |
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Voltage Tol-Max |
|
2%
|
|
|
|
Compare BZV55-B3V9,115 with alternatives
-
BZV55-B3V9,115 vs BZV55-B3V9
-
BZV55-B3V9,115 vs BZV55-B3V9112
-
BZV55-B3V9,115 vs BZV55-B3V9,135
-
BZV55-B3V9,115 vs BZV55-B3V9135
-
BZV55-B3V9,115 vs BZX284-C3V9
-
BZV55-B3V9,115 vs 1N748AUR-1
-
BZV55-B3V9,115 vs BZT52H-C3V9
-
BZV55-B3V9,115 vs BZX284-C3V9T/R
-
BZV55-B3V9,115 vs MMBZ5228BT/R13