PHD21N06LT vs HUF75309D3ST feature comparison

PHD21N06LT Nexperia

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HUF75309D3ST Rochester Electronics LLC

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer NEXPERIA ROCHESTER ELECTRONICS LLC
Package Description DPAK-3
Reach Compliance Code compliant unknown
ECCN Code EAR99
Date Of Intro 2017-02-01
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 34 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 19 A 19 A
Drain-source On Resistance-Max 0.075 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 76 A
Surface Mount YES YES
Terminal Finish TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 4
Pbfree Code Yes
JEDEC-95 Code TO-252AA
Peak Reflow Temperature (Cel) 260
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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