PMBT5551,215 vs PMBT5551T/R feature comparison

PMBT5551,215 Nexperia

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PMBT5551T/R NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Part Package Code TO-236 SOT-23
Package Description PLASTIC, SST3, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 1997-09-01
Samacsys Manufacturer Nexperia
Collector Current-Max (IC) 0.3 A 0.3 A
Collector-Base Capacitance-Max 6 pF 6 pF
Collector-Emitter Voltage-Max 160 V 160 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 30
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz 100 MHz
VCEsat-Max 0.2 V 0.2 V
Base Number Matches 2 3
Power Dissipation-Max (Abs) 0.25 W

Compare PMBT5551,215 with alternatives

Compare PMBT5551T/R with alternatives