PMBT5551,215
vs
PMBT5551T/R
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
NEXPERIA
NXP SEMICONDUCTORS
Part Package Code
TO-236
SOT-23
Package Description
PLASTIC, SST3, 3 PIN
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
3
Manufacturer Package Code
SOT23
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
1997-09-01
Samacsys Manufacturer
Nexperia
Collector Current-Max (IC)
0.3 A
0.3 A
Collector-Base Capacitance-Max
6 pF
6 pF
Collector-Emitter Voltage-Max
160 V
160 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
30
30
JEDEC-95 Code
TO-236AB
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
NPN
NPN
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
100 MHz
100 MHz
VCEsat-Max
0.2 V
0.2 V
Base Number Matches
2
3
Power Dissipation-Max (Abs)
0.25 W
Compare PMBT5551,215 with alternatives
Compare PMBT5551T/R with alternatives