PMGD280UN,115 vs SI3441DV feature comparison

PMGD280UN,115 Nexperia

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SI3441DV Fairchild Semiconductor Corporation

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Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer NEXPERIA FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TSSOP SOT
Package Description SMALL OUTLINE, R-PDSO-G6 SUPERSOT-6
Pin Count 6 6
Manufacturer Package Code SOT363
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 0.87 A 3.5 A
Drain-source On Resistance-Max 0.34 Ω 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 2 1
Number of Terminals 6 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL P-CHANNEL
Surface Mount YES YES
Terminal Finish TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 6
Rohs Code Yes
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.8 W
Qualification Status Not Qualified

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