PMGD280UN,115
vs
SI3441DV
feature comparison
| Part Life Cycle Code |
Not Recommended
|
Transferred
|
| Ihs Manufacturer |
NEXPERIA
|
TEMIC SEMICONDUCTORS
|
| Part Package Code |
TSSOP
|
|
| Package Description |
SMALL OUTLINE, R-PDSO-G6
|
|
| Pin Count |
6
|
|
| Manufacturer Package Code |
SOT363
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.29.00.75
|
|
| Date Of Intro |
2017-02-01
|
|
| Samacsys Manufacturer |
Nexperia
|
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
0.87 A
|
3.3 A
|
| Drain-source On Resistance-Max |
0.34 Ω
|
0.135 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G6
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
6
|
6
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
3
|
| Qualification Status |
|
Not Qualified
|
|
|
|
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