QS8882-25D
vs
QS8882-25DB
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
QUALITY SEMICONDUCTOR INC
|
QUALITY SEMICONDUCTOR INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| Access Time-Max |
25 ns
|
25 ns
|
| I/O Type |
SEPARATE
|
SEPARATE
|
| JESD-30 Code |
R-GDIP-T28
|
R-GDIP-T28
|
| JESD-609 Code |
e0
|
e0
|
| Memory Density |
65536 bit
|
65536 bit
|
| Memory IC Type |
CACHE TAG SRAM
|
CACHE TAG SRAM
|
| Memory Width |
4
|
4
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
28
|
28
|
| Number of Words |
16384 words
|
16384 words
|
| Number of Words Code |
16000
|
16000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Organization |
16KX4
|
16KX4
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Output Enable |
YES
|
YES
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP28,.3
|
DIP28,.3
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Standby Current-Max |
0.0015 A
|
0.002 A
|
| Standby Voltage-Min |
4.5 V
|
4.5 V
|
| Supply Current-Max |
0.11 mA
|
0.13 mA
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
MILITARY
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
1
|
| Screening Level |
|
38535Q/M;38534H;883B
|
|
|
|
Compare QS8882-25D with alternatives
Compare QS8882-25DB with alternatives