R6020KNJTL
vs
SIHH21N65EF-T1-GE3
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ROHM CO LTD
|
VISHAY INTERTECHNOLOGY INC
|
Package Description |
TO-263, SC-83, D2PAK-3/2
|
SMALL OUTLINE, S-PSSO-N4
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
23 Weeks
|
18 Weeks
|
Samacsys Manufacturer |
ROHM Semiconductor
|
Vishay
|
Avalanche Energy Rating (Eas) |
418 mJ
|
353 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
650 V
|
Drain Current-Max (ID) |
20 A
|
19.8 A
|
Drain-source On Resistance-Max |
0.196 Ω
|
0.18 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
|
JESD-30 Code |
R-PSSO-G2
|
S-PSSO-N4
|
JESD-609 Code |
e2
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
60 A
|
53 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin/Copper (Sn/Cu)
|
|
Terminal Form |
GULL WING
|
NO LEAD
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
10
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
|
|
|
Compare R6020KNJTL with alternatives
Compare SIHH21N65EF-T1-GE3 with alternatives