RFD8P06LESM9A vs 2SJ315 feature comparison

RFD8P06LESM9A Rochester Electronics LLC

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2SJ315 Toshiba America Electronic Components

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC TOSHIBA CORP
Part Package Code TO-252AA SC-64
Package Description TO-252AA VARIANT, 3 PIN IN-LINE, R-PSIP-T3
Pin Count 4 3
Reach Compliance Code unknown unknown
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 8 A 5 A
Drain-source On Resistance-Max 0.33 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 1
Rohs Code No
ECCN Code EAR99
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 20 A
Terminal Finish Tin/Lead (Sn/Pb)

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