RGF1BHE3_A/H vs GS1B-HF feature comparison

RGF1BHE3_A/H Vishay Intertechnologies

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GS1B-HF Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown compliant
Factory Lead Time 8 Weeks
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.1 V
JEDEC-95 Code DO-214BA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 5 µA 5 µA
Reverse Recovery Time-Max 0.15 µs 2.5 µs
Reverse Test Voltage 100 V 100 V
Surface Mount YES YES
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description R-PDSO-C2
ECCN Code EAR99
HTS Code 8541.10.00.80
Date Of Intro 2019-04-04
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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