RSR020N06HZGTL
vs
SI2308BDS-T1-BE3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
End Of Life
|
| Ihs Manufacturer |
ROHM CO LTD
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
ROHM Semiconductor
|
Vishay
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
60 V
|
|
| Drain Current-Max (ID) |
2 A
|
|
| Drain-source On Resistance-Max |
0.21 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| Feedback Cap-Max (Crss) |
22 pF
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
1 W
|
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
YES
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare RSR020N06HZGTL with alternatives
Compare SI2308BDS-T1-BE3 with alternatives