S-LBAV70WT1G
vs
BAV70
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
LESHAN RADIO CO LTD
|
PLESSEY SEMICONDUCTORS DISCRETE COMPONENTS DIV
|
| Package Description |
R-PDSO-G3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
|
| Application |
GENERAL PURPOSE
|
|
| Configuration |
COMMON CATHODE, 2 ELEMENTS
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| Number of Elements |
2
|
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
0.1 A
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Power Dissipation-Max |
0.2 W
|
|
| Reference Standard |
AEC-Q101
|
|
| Rep Pk Reverse Voltage-Max |
70 V
|
|
| Reverse Recovery Time-Max |
0.006 µs
|
|
| Surface Mount |
YES
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
70
|
|
|
|
Compare S-LBAV70WT1G with alternatives