S1B vs US1B-E3/61T feature comparison

S1B Taiwan Semiconductor

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US1B-E3/61T Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 4 Weeks 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor Vishay
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 1.5 µs 0.05 µs
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 40
Base Number Matches 382 1
Package Description SMA, 2 PIN
Additional Feature FREE WHEELING DIODE
Application EFFICIENCY
Breakdown Voltage-Min 100 V
Reverse Current-Max 10 µA
Reverse Test Voltage 100 V

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