S1B-GT3
vs
ES1BT/R
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
NXP SEMICONDUCTORS
|
| Package Description |
R-PDSO-C2
|
PLASTIC PACKAGE-2
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
LOW POWER LOSS
|
LOW LEAKAGE CURRENT
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-214AC
|
DO-214AC
|
| JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Recovery Time-Max |
2.5 µs
|
0.025 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
1
|
| Part Package Code |
|
DO-214AC
|
| Pin Count |
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Application |
|
ULTRA FAST RECOVERY
|
| Forward Voltage-Max (VF) |
|
1.1 V
|
| Non-rep Pk Forward Current-Max |
|
25 A
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Reference Standard |
|
IEC-134
|
| Reverse Current-Max |
|
5 µA
|
| Reverse Test Voltage |
|
100 V
|
| Technology |
|
AVALANCHE
|
|
|
|
Compare S1B-GT3 with alternatives
Compare ES1BT/R with alternatives