SD212DE
vs
SD212DE
feature comparison
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
CALOGIC LLC
|
TELEDYNE COMPONENTS
|
Part Package Code |
TO-72
|
|
Package Description |
HERMETIC SEALED PACKAGE-4
|
CYLINDRICAL, O-MBCY-W3
|
Pin Count |
4
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.90.00.00
|
8541.29.00.95
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
Case Connection |
SUBSTRATE
|
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
10 V
|
10 V
|
Drain Current-Max (ID) |
0.05 A
|
0.05 A
|
Drain-source On Resistance-Max |
70 Ω
|
70 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
0.5 pF
|
0.5 pF
|
JEDEC-95 Code |
TO-72
|
TO-206AF
|
JESD-30 Code |
O-MBCY-W4
|
O-MBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
125 °C
|
125 °C
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
1.2 W
|
1.2 W
|
Power Dissipation-Max (Abs) |
0.3 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
|
|
|
Compare SD212DE with alternatives
Compare SD212DE with alternatives