SI2301BDS-T1
vs
SSM3J304T
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
End Of Life
|
Ihs Manufacturer |
VISHAY SILICONIX
|
TOSHIBA CORP
|
Part Package Code |
SOT-23
|
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count |
3
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
20 V
|
20 V
|
Drain Current-Max (ID) |
2.2 A
|
2.3 A
|
Drain-source On Resistance-Max |
0.1 Ω
|
0.297 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-236AB
|
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
1
|
Power Dissipation-Max (Abs) |
|
0.7 W
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare SI2301BDS-T1 with alternatives
Compare SSM3J304T with alternatives