SI2308BDS-T1-GE3
vs
SI2308BDS-T1-BE3
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
VISHAY INTERTECHNOLOGY INC
|
Reach Compliance Code |
compliant
|
compliant
|
Factory Lead Time |
8 Weeks, 1 Day
|
9 Weeks
|
Samacsys Manufacturer |
Vishay
|
Vishay
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
60 V
|
|
Drain Current-Max (ID) |
1.9 A
|
|
Drain-source On Resistance-Max |
0.156 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code |
TO-236AB
|
|
JESD-30 Code |
R-PDSO-G3
|
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
|
Number of Terminals |
3
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
|
Power Dissipation-Max (Abs) |
1.66 W
|
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
|
Terminal Finish |
MATTE TIN
|
MATTE TIN
|
Terminal Form |
GULL WING
|
|
Terminal Position |
DUAL
|
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
1
|
1
|
|
|
|
Compare SI2308BDS-T1-GE3 with alternatives
Compare SI2308BDS-T1-BE3 with alternatives