SI2337DS-T1-E3 vs VP3203N3-G feature comparison

SI2337DS-T1-E3 Vishay Siliconix

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VP3203N3-G Supertex Inc

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code End Of Life Transferred
Ihs Manufacturer VISHAY SILICONIX SUPERTEX INC
Part Package Code SOT-23 TO-92
Package Description SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3
Pin Count 3 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.21.00.95
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V 30 V
Drain Current-Max (ID) 0.0012 A 0.65 A
Drain-source On Resistance-Max 0.27 Ω 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236 TO-92
JESD-30 Code R-PDSO-G3 O-PBCY-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -50 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W 0.74 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Additional Feature HIGH INPUT IMPEDANCE
Feedback Cap-Max (Crss) 60 pF
Power Dissipation Ambient-Max 0.74 W

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