SI2338DS-T1-GE3
vs
DMN3404LQ-7
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
VISHAY SILICONIX
|
DIODES INC
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
|
Pin Count |
3
|
3
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
Diodes Incorporated
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
30 V
|
|
Drain Current-Max (ID) |
6 A
|
|
Drain-source On Resistance-Max |
0.028 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss) |
42 pF
|
|
JEDEC-95 Code |
TO-236AB
|
|
JESD-30 Code |
R-PDSO-G3
|
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
|
Number of Terminals |
3
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
|
Power Dissipation-Max (Abs) |
2.5 W
|
|
Surface Mount |
YES
|
|
Terminal Finish |
MATTE TIN
|
MATTE TIN
|
Terminal Form |
GULL WING
|
|
Terminal Position |
DUAL
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
Factory Lead Time |
|
8 Weeks
|
JESD-609 Code |
|
e3
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare SI2338DS-T1-GE3 with alternatives
Compare DMN3404LQ-7 with alternatives