SI3458DV-T1 vs FDS6912AL86Z feature comparison

SI3458DV-T1 Vishay Intertechnologies

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FDS6912AL86Z Fairchild Semiconductor Corporation

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Drain Current-Max (ID) 3.2 A 6 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Base Number Matches 2 1
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Additional Feature LOGIC LEVEL COMPATIBLE
DS Breakdown Voltage-Min 30 V
Drain-source On Resistance-Max 0.028 Ω
JESD-30 Code R-PDSO-G8
Number of Terminals 8
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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