SI3458DV-T1-E3
vs
2N5547
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
TEMIC SEMICONDUCTORS
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
|
| Configuration |
SINGLE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
3.2 A
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
| Number of Elements |
1
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
2 W
|
|
| Surface Mount |
YES
|
NO
|
| Base Number Matches |
2
|
8
|
| Additional Feature |
|
LOW NOISE
|
| Feedback Cap-Max (Crss) |
|
2 pF
|
| JEDEC-95 Code |
|
TO-71
|
| JESD-30 Code |
|
O-MBCY-W6
|
| Number of Terminals |
|
6
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|