SI4410BDY-T1-GE3 vs SI4490DY-T1-E3 feature comparison

SI4410BDY-T1-GE3 Vishay Intertechnologies

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SI4490DY-T1-E3 Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC VISHAY INTERTECHNOLOGY INC
Package Description MS-012, SOIC, SOP-8 ROHS COMPLIANT, SOP-8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay Vishay
Avalanche Energy Rating (Eas) 11.25 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 200 V
Drain Current-Max (ID) 14 A 2.85 A
Drain-source On Resistance-Max 0.014 Ω 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 72 pF
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 5 W 3.1 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 44 ns
Turn-on Time-Max (ton) 36 ns
Base Number Matches 1 1
Factory Lead Time 9 Weeks
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare SI4410BDY-T1-GE3 with alternatives

Compare SI4490DY-T1-E3 with alternatives