SI4922BDY-T1-E3
vs
2N5453
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
End Of Life
|
Contact Manufacturer
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Package Description |
SOIC-8
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
30 V
|
|
| Drain Current-Max (ID) |
8 A
|
|
| Drain-source On Resistance-Max |
0.024 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
| JEDEC-95 Code |
MS-012AA
|
|
| JESD-30 Code |
R-PDSO-G8
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
2
|
|
| Number of Terminals |
8
|
|
| Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-50 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
3.1 W
|
|
| Surface Mount |
YES
|
|
| Terminal Finish |
Matte Tin (Sn)
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
9
|
|
|
|
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