SI8409DB-T1-E1
vs
SI8409DB-T1-E1
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Not Recommended
|
Not Recommended
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
VISHAY INTERTECHNOLOGY INC
|
| Part Package Code |
CSP
|
|
| Package Description |
GRID ARRAY, S-PBGA-B4
|
HALOGEN FREE AND ROHS COMPLIANT, CSP-4
|
| Pin Count |
4
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
Vishay
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
4.6 A
|
4.6 A
|
| Drain-source On Resistance-Max |
0.065 Ω
|
0.065 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-PBGA-B4
|
S-PBGA-B4
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
GRID ARRAY
|
GRID ARRAY
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
2.77 W
|
2.77 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
|
|
|
Compare SI8409DB-T1-E1 with alternatives
Compare SI8409DB-T1-E1 with alternatives